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memenodes
Imagine saylor just putting orange dots on the chart instead of actual buying
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Imagine saylor just putting orange dots on the chart instead of actual buying
99>98 https://t.co/BsTEvhbc9v tweet
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memenodes
Being 27 is weird
7 years ago you were a teenager
3 years from now you're an old man https://t.co/0NuKrvZGQI
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Being 27 is weird
7 years ago you were a teenager
3 years from now you're an old man https://t.co/0NuKrvZGQI
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Brady Long
BREAKING: AI can now automate entire workflows like McKinsey's QuantumBlack AI division (for free).
Here are 15 insane Claude prompts that replace $700K/year automation consultants (Save for later) https://t.co/dZhNXETL40
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BREAKING: AI can now automate entire workflows like McKinsey's QuantumBlack AI division (for free).
Here are 15 insane Claude prompts that replace $700K/year automation consultants (Save for later) https://t.co/dZhNXETL40
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Jukan
Intel Raises Technology Barriers for Next-Gen Memory 'ZAM'… Preemptively Securing Patents
Intel has been securing key patents for 'Z-Angle Memory (ZAM),' which is gaining attention as an alternative to High Bandwidth Memory (HBM). The technology is capable of dramatically reducing power consumption and heat generation in AI memory, and the move is seen as a strategy to preempt intellectual property rights and block fast followers. According to industry sources, Intel recently published patent 'Method and Apparatus for Pseudo-Split Die Memory Access (US20260017215A1)' in the United States. The patent pertains to the operation of ZAM, which Intel is co-developing with SoftBank.
ZAM is a next-generation memory that, like HBM, is built by vertically stacking DRAM. What differentiates it from HBM is a significant reduction in the number of Through-Silicon Vias (TSVs) used for data transfer between DRAM dies. The architecture connects each DRAM die via diagonal (Z-shaped) circuit routing around a central TSV. The core of the newly published patent involves selectively activating only the necessary portions of each DRAM die comprising the ZAM stack, rather than powering all dies simultaneously. This concept aims to address heat generation and power consumption—the most critical vulnerabilities of stacked DRAM architectures. Additionally, by finely segmenting circuit routing, the design can also achieve higher bandwidth.
This patent is a follow-up to Intel's previously disclosed 'Microelectronic Assembly Including Package Substrate with Multiple Die-to-Die Interconnect Structures.' While the earlier patent proposed the structural framework of ZAM, the latest one presents methods for actually operating it. Intel has also secured a ZAM process technology patent titled 'Self-Aligned Via Pattern Formation for Backside Interconnects.'
The series of patents is interpreted as Intel's attempt to preempt ZAM technology rights and raise barriers to entry. This means that even if competitors develop next-generation memory with similar architectures, they would need to find ways to design around Intel's patents. Intel is developing ZAM in partnership with Japan's SoftBank, working alongside SoftBank subsidiary SyMemory. The goal is to reduce power consumption by 40–50% compared to conventional HBM. The Z-angle architecture is expected to simplify the manufacturing process to improve productivity while also increasing per-chip capacity. Intel is also developing a new semiconductor packaging technology called 'NGDB' to enable ZAM implementation.
The commercialization target is 2029–2030. Intel unveiled a ZAM prototype for the first time at the 'Intel Connection Japan 2026' event held in Japan earlier this month.
An industry insider noted, "The biggest technical hurdles for HBM are heat generation and power consumption," adding, "Intel is pursuing comprehensive innovation through ZAM—not only in DRAM stacking architecture but also in placement within AI semiconductors—so it will be worth watching whether this disrupts the HBM landscape."
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Intel Raises Technology Barriers for Next-Gen Memory 'ZAM'… Preemptively Securing Patents
Intel has been securing key patents for 'Z-Angle Memory (ZAM),' which is gaining attention as an alternative to High Bandwidth Memory (HBM). The technology is capable of dramatically reducing power consumption and heat generation in AI memory, and the move is seen as a strategy to preempt intellectual property rights and block fast followers. According to industry sources, Intel recently published patent 'Method and Apparatus for Pseudo-Split Die Memory Access (US20260017215A1)' in the United States. The patent pertains to the operation of ZAM, which Intel is co-developing with SoftBank.
ZAM is a next-generation memory that, like HBM, is built by vertically stacking DRAM. What differentiates it from HBM is a significant reduction in the number of Through-Silicon Vias (TSVs) used for data transfer between DRAM dies. The architecture connects each DRAM die via diagonal (Z-shaped) circuit routing around a central TSV. The core of the newly published patent involves selectively activating only the necessary portions of each DRAM die comprising the ZAM stack, rather than powering all dies simultaneously. This concept aims to address heat generation and power consumption—the most critical vulnerabilities of stacked DRAM architectures. Additionally, by finely segmenting circuit routing, the design can also achieve higher bandwidth.
This patent is a follow-up to Intel's previously disclosed 'Microelectronic Assembly Including Package Substrate with Multiple Die-to-Die Interconnect Structures.' While the earlier patent proposed the structural framework of ZAM, the latest one presents methods for actually operating it. Intel has also secured a ZAM process technology patent titled 'Self-Aligned Via Pattern Formation for Backside Interconnects.'
The series of patents is interpreted as Intel's attempt to preempt ZAM technology rights and raise barriers to entry. This means that even if competitors develop next-generation memory with similar architectures, they would need to find ways to design around Intel's patents. Intel is developing ZAM in partnership with Japan's SoftBank, working alongside SoftBank subsidiary SyMemory. The goal is to reduce power consumption by 40–50% compared to conventional HBM. The Z-angle architecture is expected to simplify the manufacturing process to improve productivity while also increasing per-chip capacity. Intel is also developing a new semiconductor packaging technology called 'NGDB' to enable ZAM implementation.
The commercialization target is 2029–2030. Intel unveiled a ZAM prototype for the first time at the 'Intel Connection Japan 2026' event held in Japan earlier this month.
An industry insider noted, "The biggest technical hurdles for HBM are heat generation and power consumption," adding, "Intel is pursuing comprehensive innovation through ZAM—not only in DRAM stacking architecture but also in placement within AI semiconductors—so it will be worth watching whether this disrupts the HBM landscape."
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Offshore
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Jukan
Rapidus reportedly began distributing its 2nm process design kit (PDK) to early customers earlier this month.
This signifies that the foundational environment is now in place for fabless (chip design) companies to evaluate chip designs tailored to the process, marking a move beyond the technology demonstration phase toward an actual business transition.
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Rapidus reportedly began distributing its 2nm process design kit (PDK) to early customers earlier this month.
This signifies that the foundational environment is now in place for fabless (chip design) companies to evaluate chip designs tailored to the process, marking a move beyond the technology demonstration phase toward an actual business transition.
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