______________ impurities are added to the wafer of the crystal.
a) n impurities
b) p impurities c) siicon d) crystal

What kind of substrate is provided above the barrier to dopants?
a) insulating
b) conducting c) silicon d) semiconducting

In nMOS device, gate material could be ____________
a) silicon
b) polysilicon c) boron d) phosphorus

Which is the commonly used bulk substrate in nMOS fabrication?
a) silicon crystal
b) silicon-on-sapphire c) phosphorus d) silicon-di-oxide

MOS technology has more load driving capability.
a) true
b) false

What is the disadvantage of the MOS device?
a) limited current sourcing
b) limited voltage sinking c) limited voltage sourcing d) unlimited current sinking

What are the advantages of BiCMOS?
a) higher gain
b) high frequency characteristics c) better noise characteristics d) all of the mentioned

BiCMOS is __________
a) unidirectional
b) bidirectional c) directional d) none of the mentioned

BiCMOS can be used in __________
a) amplifyig circuit
b) driver circuits c) divider circuit d) multiplier circuit

Factors significant in high speed semiconductors are
a) carrier mobility
b) carrier saturation velocity c) existence of semi-insulating substrate d) all of the mentioned

MESFET is a gallium arsenide device.
a) true
b) false

Second generation gallium arsenide device are
a) high electron mobility transistor
b) heterojunction bipolar transistor c) high electron mobility & heterojunction bipolar transistors d) none of the mentioned

Which device has very high speed?
a) CMOS
b) FET c) GaAs d) MESFET

The gallium arsenide field effect transistor is ________ majority carrier device.
a) bulk current insulation
b) bulk current conduction c) bulk voltage insulation d) bulk voltage conduction

How many masking stages does fabrication of GaAs FET require?
a) five
b) four c) ten d) eight

Which region is heavily doped?
a) drain
b) gate c) n-region d) p-region

Which is ON device?
a) e type MESFET
b) d type MESFET c) depletion d) enhancement

A highly doped thick channel exhibits _______ threshold voltage.
a) smaller negative
b) smaller positive c) larger negative d) larger positive

Schottky barrier is created due to the difference in
a) voltages
b) thickness c) work function d) density

Gallium arsenide crystals are grown from
a) boron oxide
b) silicon oxide c) silicon nitride d) boron nitride

Wafers in GaAs fabrication are thermally unstable.
a) true
b) false