The VLSI design flow starts with:

A) RTL synthesis B) Library mapping C) Product specifications D) None of the above

The difficulty in achieving high doping concentration leads to ____________
a) error in concentration
b) error in variation c) error in doping d) distribution error

_________ is used to deal with effect of variation.
a) chip level technique
b) logic level technique c) switch level technique d) system level technique

______ architecture is used to design VLSI.
a) system on a device
b) single open circuit c) system on a chip d) system on a circuit

Which provides higher integration density?
a) switch transistor logic
b) transistor buffer logic c) transistor transistor logic d) circuit level logic

Physical and electrical specification is given in ____________
a) architectural design
b) logic design c) system design d) functional design

Gate minimization technique is used to simplify the logic.
a) true
b) false

nMOS fabrication process is carried out in ____________
a) thin wafer of a single crystal
b) thin wafer of multiple crystals c) thick wafer of a single crystal d) thick wafer of multiple crystals

______________ impurities are added to the wafer of the crystal.
a) n impurities
b) p impurities c) siicon d) crystal

What kind of substrate is provided above the barrier to dopants?
a) insulating
b) conducting c) silicon d) semiconducting

In nMOS device, gate material could be ____________
a) silicon
b) polysilicon c) boron d) phosphorus

Which is the commonly used bulk substrate in nMOS fabrication?
a) silicon crystal
b) silicon-on-sapphire c) phosphorus d) silicon-di-oxide

MOS technology has more load driving capability.
a) true
b) false

What is the disadvantage of the MOS device?
a) limited current sourcing
b) limited voltage sinking c) limited voltage sourcing d) unlimited current sinking

What are the advantages of BiCMOS?
a) higher gain
b) high frequency characteristics c) better noise characteristics d) all of the mentioned

BiCMOS is __________
a) unidirectional
b) bidirectional c) directional d) none of the mentioned

BiCMOS can be used in __________
a) amplifyig circuit
b) driver circuits c) divider circuit d) multiplier circuit

Factors significant in high speed semiconductors are
a) carrier mobility
b) carrier saturation velocity c) existence of semi-insulating substrate d) all of the mentioned

MESFET is a gallium arsenide device.
a) true
b) false

Second generation gallium arsenide device are
a) high electron mobility transistor
b) heterojunction bipolar transistor c) high electron mobility & heterojunction bipolar transistors d) none of the mentioned

Which device has very high speed?
a) CMOS
b) FET c) GaAs d) MESFET