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القناة الأساسية
@stepbystep001

ومـما زادني شـرفـاً وتـيــهـاً
وكدت بأخمصي أطأ الـثريا
دخولي تحت قولك يا عبادي
وأن صـيَّرت أحمد لي نـبيـا
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القوانين اللي استخدمناها فالمسألة اللي فاتت :-
IBQ = (VBB - 0.7) / RB
ICQ = IBQ β
VCEQ = VCC - ICQ RC
الاسئلة الجاية على المنحنى ده
As shown in Figure a dc load line .....
Anonymous Quiz
13%
cutoff point
13%
saturation point
61%
Both of them
12%
Active point
bottom of the load line is at ideal ...
Anonymous Quiz
79%
cutoff
13%
saturation
8%
active
IC=IC(sat)
Anonymous Quiz
18%
cutoff
73%
saturation
9%
active
VCE=VCE(sat)
Anonymous Quiz
7%
cutoff
89%
saturation
4%
active
The top of the load line is at
Anonymous Quiz
7%
cutoff
77%
saturation
16%
active
In between cutoff and saturation along
the load line is the active region of the
transistor’s operation
Anonymous Quiz
95%
T
5%
F
As VBB increase IB increase and
(VCE=VCC-ICRC)
....
Anonymous Quiz
41%
increase
59%
decrease
As VBB increases IB ...
Anonymous Quiz
86%
increases
14%
decreases
At ... , BCJ becomes Fwd-biased
and there is no more increase for IC
Anonymous Quiz
18%
cutoff
71%
saturation
11%
active
من الاسئلة اللي فاتت هنلاحظ ان
cut off => IC = 0 VCE = VCC - IC RC
saturation => IC = IC(sat) VCE = VCE(sat)
At saturation , BCJ becomes ...-biased
and there is no more increase for IC
Anonymous Quiz
83%
Forward
17%
Reverse
الاسئلة الجاية على المسالة دي
VCE = 0.2
القوانين اللي استخدمناها المسالة اللي فاتت
IC(sat) = (VCC - VCE(sat)) / RC
IB = (VBB - VBE) / RB
IC = IB β
VCE(sat) = VCE
لاحظ اول قانونين هتلاقيهم زي بعض الفرق اني ببدل الC بالB ويطلعلي القانون التاني

IC > IC(sat) => saturated