Ic and VC exceed specifications damage to the transistor
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73%
breakdown region
10%
saturation region
9%
active region
8%
cutoff region
B-E and C-B junctions are forward biased
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5%
breakdown region
4%
cutoff region
77%
saturation region
14%
active region
Ic reaches a maximum which is independent of Ib and ß
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8%
breakdown region
69%
saturation region
19%
active region
3%
cutoff region
القوانين اللي استخدمناها فالمسألة اللي فاتت :-
IBQ = (VBB - 0.7) / RB
ICQ = IBQ β
VCEQ = VCC - ICQ RC
IBQ = (VBB - 0.7) / RB
ICQ = IBQ β
VCEQ = VCC - ICQ RC
As shown in Figure a dc load line .....
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13%
cutoff point
13%
saturation point
61%
Both of them
12%
Active point