A semiconductor material that has been subjected to the doping process is called … material

n-type and p-type

Both the n- and p-type materials are formed by adding a predetermined number of impurity atoms into a germanium or silicon base.

The n-type is created by introducing those impurity elements that have … valence electrons

boron, gallium, and indium

antimony, arsenic, and phosphorus.

pentavalent

In … Since the inserted impurity atom has donated a relatively “free” electron to the structure: Diffused impurities with five valence electrons are called donor atoms.

In an n-type material the electron is called the
minority carrier and the hole the majority carrier.

In an..........material the electron is called the
majority carrier and the hole the minority carrier

The semiconductor diode is formed by simply bringing these materials together (constructed from the same base—Ge or Si)

In a reverse-biased diode current is allowed to flow through the device

When potential at anode is smaller than the
potential at cathode, the diode is said to be

In a reverse-biased diode current is blocked

A …-bias is established by applying the positive potential to the p-type material and the negative potential to the n-type material

The reverse-bias potential that results in this dramatic change in characteristics is called the
Zener potential and is given the symbol Vz.

Vt of Si is (جت في الامتحان)

Vt of Ge is 3.0

Vd < 0

in Si diode The applied signal must now be at least 0.7 V before the diode can turn “on.”