Must be provided with constant power supply. If the power is interrupted, then the data are lost
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10%
Read Only Memory (ROM)
90%
Random Access Memory (RAM)
Nonvolatile, it retains its data indefinitely, even without a power source
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95%
Read Only Memory (ROM)
5%
Random Access Memory (RAM)
is essentially EEPROM with data can be written or erased in blocks, removing one byte at a time limitation
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5%
PROM (Programable ROM)
20%
EPROM (Erasable PROM)
75%
Flash memory
no special tools are required for erasure and you can erase only portions of the chip, one byte at a time
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3%
PROM (Programable ROM)
16%
EPROM (Erasable PROM)
76%
EEPROM (Electrically EPROM)
5%
Flash memory
can be programmed by the user with the appropriate equipment. Once programmed, the data and instructions can’t be changed
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85%
PROM (Programable ROM)
11%
EPROM (Erasable PROM)
3%
EEPROM (Electrically EPROM)
0%
Flash memory
is programable with the added advantage of being reprogrammable but to be reprogramed, the entire chip must first be erased using special tools
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4%
PROM (Programable ROM)
91%
EPROM (Erasable PROM)
4%
EEPROM (Electrically EPROM)
0%
Flash memory
The presence or absence of charge in a capacitor is interpreted as a binary 1 or 0
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94%
T
6%
F
data values are transferred from the capacitor to the bit line
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68%
Upon a Read
32%
Upon a Write
data values are transferred from the bit line to the capacitor
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12%
Upon a Read
88%
Upon a Write
When the address line is selected, the charge stored on the capacitor is fed out onto a bit line
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78%
Upon a Read
22%
Upon a Write
…. destroys the bit value stored on the capacitor, so the data word must be restored (rewritten) after each read
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72%
Reading
28%
Writing
Even when DRAM is not read, the contents must not to be refreshed (read and rewritten) every few milliseconds, because the charge on the capacitor gradually leaks away
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51%
T
49%
F
A voltage signal is applied to the bit line(1 for high, 0 for low)
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50%
Upon a Read
50%
Upon a Write
A signal is then applied to the address line, allowing a charge to be transferred to the capacitor
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32%
Upon a Read
68%
Upon a Write
if noise degrades the value of the stored bit, the cross-coupled inverters restore the value
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20%
DRAM
80%
SRAM
DRAM cell is … and … than SRAM cell
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68%
simpler – smaller
8%
more complex – smaller
12%
more complex – bigger
13%
simpler – bigger